Improvement of CoSi2 stability on fine grain sized poly-Si using nitrogen implantation through Co monosilicide and its effect on 0.18 μm dual gate CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 53-54

  Bae, Jong Uk ^a   Sohn, Dong Kyun ^a   Park, Ji Soo ^a   Lee, Byung Hak ^a   Han, Chang Hee ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SALICIDE; GATE DEPLETION; SUB QUARTER MICRON HIGH SPEED CMOS LOGIC DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033280625     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)