Properties of polycrystalline Si1-xGex films grown by ultrahigh vacuum CVD using Si2H6 and GeH4

Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

  Kang, S K ^a   Kim, J J ^a   Ko, D H ^a   Kang, H B ^b   Yang, C W ^b   Ahn, T H ^c   Yeo, I S ^b   Lee, T W ^d   Lee, Y H ^d  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d Ju sung Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); ION IMPLANTATION; MOS CAPACITORS; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; VACUUM APPLICATIONS; VOLTAGE MEASUREMENT;

GATE DEPLETION EFFECT; POLYCRYSTALLINE FILM; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0037351262     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1539501     Document Type: Article

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