Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1999, Pages 44-49

  Chua, H N ^a   Pey, K L ^a   Siah, S Y ^a   Ong, L Y ^a   Lim, E H ^a   Gan, C L ^a   See, K H ^a   Ho, C S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TITANIUM COMPOUNDS;

TITANIUM SILICIDE;

INTEGRATED CIRCUIT TESTING;

EID: 0033285859     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)