Low-resistivity poly-metal gate electrode durable for high-temperature processing

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1864-1869

  Akasaka, Yasushi ^a   Suehiro, Shintaro ^a   Nakajima, Kazuaki ^a   Nakasugi, Tetsuro ^a   Miyano, Kiyotaka ^a   Kasai, Kunihiro ^a   Oyamatsu, Hisato ^a   Kinugawa, Masaaki ^a   Takagi, Mariko Takayanagi ^a   Agawa, Kenichi ^a   Matsuoka, Fumitomo ^a   Kakumu, Masakazu ^a   Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; EQUIVALENT CIRCUITS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY; TUNGSTEN ALLOYS; ULTRATHIN FILMS;

POLYMETAL GATE STRUCTURES; SHEET RESISTIVITY;

GATES (TRANSISTOR);

EID: 0030284735     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543020     Document Type: Article

References (7)

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7. Y. Akasaka S. Suehiro K. Nakajima T. Nakasugi K. Miyano K. Kasai H. Oyamatsu M. Kinugawa M. Takagi K. Agawa F. Matsuoka M. Kakumu K. Suguro Low-resistivity poly-metal gate electrode durable for high-temperature processing Proc. 12th VLSI Multilevel Interconnection Conf. 168 174 1995