E-T Based Statistical Modeling and Compact Statistical Ciircuit Simulation Methodologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 635-638

  Chen, James C ^a   Hu, Chenming ^a   Wan, C P Dan ^b   Bendix, Peter ^b   Kapoor, Ashok ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; PARAMETER EXTRACTION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK SYNTHESIS; STATISTICAL METHODS;

CURVE-FIT; I - V CURVE; MODELING PARAMETERS; MULTIPLE DEVICES; PARAMETERS EXTRACTION; PARAMETERS VARIATIONS; PROCESS VARIATION; SIMULATION METHODOLOGY; STATISTIC MODELING; STATISTICAL PARAMETERS;

EXTRACTION; INTEGRATED CIRCUIT LAYOUT;

CIRCUIT DESIGN TECHNOLOGY; COMPACT STATISTICAL CIRCUIT SIMULATION; E-T BASED STATISTICAL MODELING METHOD; SOFTWARE PACKAGE SPICE;

EID: 0030422227     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554063     Document Type: Conference Paper

References (5)

1. [l] R.Rios, N.D. Arora, C.-L. Huang, N. Khalil, J. Faricelli, and L. Gruber, “A Physical Compact MOSFET Model, Including Quantum Mechanical Effects for Statistical Circuit Design Applications”, Proc. IEDM 1995,pp. 937-940.
2. J. Power, B. Donnellan, A. Mathewson, and W. A. Lane,”Relating Statistical MOSFET Model Parameter Variabilities to IC Manufacturing Process Fluc - tuations Enabling Realistic Worst Case Design”, IEEE Transon Semiconductor Manufacturing, Aug. 1994, pp. 306-318.
3. M.J. van Dort and D.B. Klassen, “Circuit Sensitivity Analysis in Terms of Process Parameters,” Proc. IEDM 1995,pp. 941-944.
4. BSIM3 Version 3 Users Manual.
5. J. C. Chen, C. Hu, Z. Liu, P.K. KO,“Realistic Worst-case SPICE File Extraction Using BSIM3”, Proc. CICC 1995, pp.375-378.