Vertical Power-MOSFETs with local channel doping

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 71-74

  Fink, C ^a   Schulze, J ^a   Eisele, I ^a   Hansch, W ^b   Werner, W ^c   Kanert, W ^c  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SWITCHING CIRCUITS; THIN FILM TRANSISTORS;

LOCAL CHANNEL DOPING;

MOSFET DEVICES;

EID: 0034452652     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904261     Document Type: Article

References (11)

1. A new generation of high voltage MOSFETs breaks limit line of silicon
2. Vertical Si-MOSfets with channel length down to 45nm
3. IEDM'97
4. Simulations with ATLAS II
5. Electron scattering in silicon inversion layers by oxide and surface roughness
6. Theory of impurity scattering in semiconductors
7. Dopant diffusion during rapid thermal oxidation