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Volumn 336, Issue 1-2, 1998, Pages 306-308
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Selectively grown vertical Si MOS transistor with reduced overlap capacitances
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Author keywords
Low pressure chemical vapour deposition; Miller capacitance; MOS transistor; Selective epitaxial growth
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Indexed keywords
CAPACITANCE;
CHEMICAL VAPOR DEPOSITION;
EPITAXIAL GROWTH;
PHOTOLITHOGRAPHY;
REACTIVE ION ETCHING;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICA;
THIN FILM TRANSISTORS;
TRANSCONDUCTANCE;
LOW-PRESSURE CHEMICAL VAPOR DEPOSITION;
MILLER CAPACITANCE;
SELECTIVE EPITAXIAL GROWTH;
MOSFET DEVICES;
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EID: 0032318731
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01248-6 Document Type: Article |
Times cited : (20)
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References (7)
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