60nm planarized ultra-thin body solid phase epitaxy MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 67-68

  Xuan, Peiqi ^a   Kedzierski, Jakub ^a   Subranmanian, Vivek ^a   Bokor, Jeffrey ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CRYSTALLIZATION; DEPOSITION; EPITAXIAL GROWTH; LITHOGRAPHY; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR METAL BOUNDARIES; THICKNESS CONTROL; ULTRATHIN FILMS;

CHANNEL FILM; CHANNEL THICKNESS; CONDUCTION BAND; CRYSTALLINE QUALITY; SOLID PHASE EPITAXY;

MOSFET DEVICES;

EID: 0033651358     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)