Full-band approaches to the electronic properties of nanometer-scale MOS structures

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 575-580

  Sacconi, Fabio ^a   Povolotskyi, Michael ^a   Di Carlo, Aldo ^a   Lugli, Paolo ^a   Städele, Martin ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Full band simulations; MOS; Tunneling

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; FERMI LEVEL; MOSFET DEVICES; NANOTECHNOLOGY; POISSON EQUATION; QUANTUM THEORY; SILICA;

FULL-BAND SIMULATIONS; MOS; TUNNELING;

MOS DEVICES;

EID: 0442327523     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.032     Document Type: Conference Paper

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