Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling

Journal of Computational Electronics

Volumn 1, Issue 4, 2002, Pages 467-474

  Takeda, H ^a   Mori, N ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Monte Carlo simulation; pseudo potential method; SOI MOSFET

Indexed keywords

ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; INTELLIGENT SYSTEMS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SILICON ON INSULATOR TECHNOLOGY;

DRIFT VELOCITIES; EFFECTIVE MASS APPROXIMATION; ELECTRON TRANSPORT; EMPIRICAL PSEUDO-POTENTIAL; MONTE CARLO TECHNIQUES; PSEUDOPOTENTIALS; SILICON-ON- INSULATORS (SOI); SOI-MOSFETS;

MONTE CARLO METHODS;

EID: 0442314926     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1022988921236     Document Type: Article

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