Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 359-363

  Lin, C F ^a   Yao, H H ^a   Lu, J W ^a   Hsieh, Y L ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. AlN GaN; B2. Distributed Bragg reflectors; B2. GaN; B2. InGaN GaN; B3. Resonant cavity light emitting diode

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET SPECTROMETERS; X RAY SPECTROSCOPY;

INJECTION CURRENT; VERTICAL RESONANCE CAVITY;

LIGHT EMITTING DIODES;

EID: 0348046462     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.028     Document Type: Conference Paper

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