In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 174-176

  Schenk, H P D ^a   De Mierry, P ^a   Vennegues P ^a   Tottereau, O ^a   Laugt M ^a   Vaille, M ^a   Feltin, E ^a   Beaumont, B ^a   Gibart, P ^a   Fernandez S ^b   Calle, F ^b  

^a CRHEA CNRS   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM GALLIUM NITRIDE; ALUMINUM OXIDE; BRAGG REFLECTORS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION; SEMICONDUCTOR ALLOYS;

GAN TEMPLATE; IN-SITU GROWTH; LASER REFLECTOMETRY; QUARTER WAVE STACKS; REFLECTION SPECTRA;

III-V SEMICONDUCTORS;

EID: 79956056570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430859     Document Type: Article

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