Interface control of GaN/AlGaN quantum well structures in MOVPE growth

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 124-127

  Shirasawa, Tomoe ^a   Mochida, Noriaki ^a   Inoue, Akira ^a   Honda, Tohru ^b   Sakaguchi, Takahiro ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KOGAKUIN UNIVERSITY   (Japan)

Author keywords

AlN GaN DBR; GaN AlGaN QWs; Growth interruption; Interface control; MOVPE; VCSELs

Indexed keywords

AMMONIA; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

INTERFACE CONTROL; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094297     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00184-5     Document Type: Article

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