Effects of defects and doping on wide band gap ferromagnetic semiconductors

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 39-47

  Pearton, S J ^a   Abernathy, C R ^a   Thaler, G T ^a   Frazier, R ^a   Ren, F ^a   Hebard, A F ^b   Park, Y D ^c   Norton, D P ^a   Tang, W ^d   Stavola, M ^d   Zavada, J M ^e   Wilson, R G ^f  

^a University of Florida   (United States)

^b Ctr Strongly Correlated Mat Res ^*  (United States)

^c Ctr Strongly Correlated Mat Res   (South Korea)

^d LEHIGH UNIVERSITY   (United States)

^e U S ARMY RESEARCH OFFICE   (United States)

^f NONE

Author keywords

Defects; Doping; Ferromagnetism; Semiconductors; Wide band gap

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); ENERGY GAP; EPITAXIAL GROWTH; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GIANT MAGNETORESISTANCE; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THIN FILMS; ZINC OXIDE;

ROOM TEMPERATURE; WIDE BAND GAPS;

FERROMAGNETIC MATERIALS;

EID: 0347764801     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.003     Document Type: Conference Paper

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