Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages

  Jain, Manish ^a   Kronik, Leeor ^a   Chelikowsky, James R ^a   Godlevsky, Vitaliy V ^b  

^a University of Minnesota   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM; MANGANESE;

ARTICLE; ATOM; MAGNETISM; MATHEMATICAL ANALYSIS; POLARIZATION; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0035894321     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.245205     Document Type: Article

References (30)

1. S. Datta and B. Das, Appl. Phys. Lett.56, 665 (1990).
2. G. Prinz, Science282, 1660 (1998).
3. G. Burkard, D. Loss, and D P. DiVincenzo, Phys. Rev. B59, 2070 (1999).
4. M. Shirai, T. Ogawa, I. Kitagawa, and N. Suzuki, J. Magn. Magn. Mater.177-181, 1383 (1998).
5. S. Sanvito and N A. Hill, Phys. Rev. B62, 15 553 (2000).
6. H. Ohno, Science281, 951 (1998), and references therein.
7. B. Beschoten, P A. Crowell, I. Malajovich, D D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, Phys. Rev. Lett.83, 3073 (1999).
8. Y. Ohno, D K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D D. Awschalom, Nature (London)402, 790 (1999).
9. J R. Chelikowsky and M L. Cohen, in Handbook on Semiconductors, 2nd ed., edited by T. S. Moss (Elsevier, Amsterdam, 1992);
10. W E. Pickett, Comput. Phys. Rep.9, 115 (1989).
11. J. Perdew and Y. Wang, Phys. Rev. B45, 13 244 (1992).
12. N. Troullier and J L. Martins, Phys. Rev. B43, 1993 (1991).
13. L. Kleinman and D M. Bylander, Phys. Rev. Lett.48, 1425 (1982).
14. H J. Monkhorst and J D. Pack, Phys. Rev. B13, 5188 (1976).
15. D F. Shanno and K.-H. Phua, Math. Program.14, 149 (1978).
16. T. Ogawa, M. Shirai, N. Suzuki, and I. Kitagawa, J. Magn. Magn. Mater.196-197, 428 (1999).
17. J H. Park, S K. Kwon, and B I. Min, Physica B281-282, 703 (2000).
18. R. Shioda, K. Ando, T. Hayashi, and M. Tanaka, Phys. Rev. B58, 1100 (1998).
19. Y L. Soo, S W. Huang, Z H. Ming, Y H. Kao, H. Munekata, and L L. Chang, Phys. Rev. B53, 4905 (1996).
20. H. Akai, Phys. Rev. Lett.81, 3002 (1998).
21. The underestimate of the bandgap is a well-known shortcoming of density-functional theory (see Ref. 9) that does not affect the accuracy of the valence-band results.
22. J C. Woicik, E J. Nelson, T. Kendelwicz, P. Pianneta, M. Jain, L. Kronik, and J R. Chelikowsky, Phys. Rev. B63, R041403 (2001).
23. M. Linnarsson, E. Janzén, B. Monemar, M. Kleverman, and A. Thilderkvist, Phys. Rev. B55, 6938 (1997).
24. T. Dietl, A. Haury, and Y. Merle d’Aubigné, Phys. Rev. B55, R3347 (1997).
25. J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno, Phys. Rev. B59, 12 935 (1999), and references therein.
26. S.-H. Wei and A. Zunger, Phys. Rev. B48, 6111 (1993).
27. Semiconductors: Group IV and III-V compounds, Data in Science and Technology Series, edited by O. Madelung (Springer-Verlag, Berlin, 1991).
28. W. Mönch, Semiconductor Surfaces and Interfaces (Springer-Verlag, Berlin, 1993).
29. N. Mott, Conduction in Non-Crystalline Materials (Oxford University Press, Oxford, 1987).
30. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukara, A. Shen, and Y. Sugawara, Solid State Commun.103, 209 (1997).