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Volumn 325, Issue , 2003, Pages 157-163

The electronic properties of native interstitials in ZnO

Author keywords

Interstitials; ZnO

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CHARGE CARRIERS; HALL EFFECT; ZINC OXIDE;

EID: 0037213539     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01517-X     Document Type: Article
Times cited : (51)

References (22)
  • 16
    • 77956900012 scopus 로고
    • F. Seitz, D. Turnbull (Eds.), Academic Press, New York
    • G. Heiland, E. Mollwo, F. Stöckmann, in: F. Seitz, D. Turnbull (Eds.), Solid State Physics, Vol. 8, Academic Press, New York, 1959, p. 191.
    • (1959) Solid State Physics , vol.8 , pp. 191
    • Heiland, G.1    Mollwo, E.2    Stöckmann, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.