Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

Electronics Letters

Volumn 32, Issue 17, 1996, Pages 1622-1623

  Zhang, X ^a   Walker, D ^a   Saxler, A ^a   Kung, P ^a   Xu, J ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Aluminium compounds; Chemical vapour deposition

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SUBSTRATES; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT;

ALUMINUM NITRIDE; INTERFACE TRAP LEVEL DENSITY; INVERSION LAYERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030214888     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961061     Document Type: Article

References (12)

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