Particle Formation and Trapping Behavior in a TEOS/O2 Plasma and Their Effects on Contamination of a Si Wafer

Aerosol Science and Technology

Volumn 38, Issue 2, 2004, Pages 120-127

  Setyawan, Heru ^a   Shimada, Manabu ^a   Hayashi, Yutaka ^a   Okuyama, Kikuo ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; ELECTRODES; LIGHT SCATTERING; PARTICLES (PARTICULATE MATTER); SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; VIDEO CAMERAS; VISUALIZATION;

FLOW RATES;

PLASMAS;

OXYGEN; SILICATE; SILICON; TETRAETHOXYSILANE; UNCLASSIFIED DRUG;

FLOW VISUALIZATION; GAS FLOW; LASER MEASUREMENT; PARTICLE FLOW; SCANNING ELECTRON MICROSCOPY;

ANALYTIC METHOD; ARTICLE; ELECTRODE; GAS FLOW; HIGH TEMPERATURE; LASER; LIGHT SCATTERING; PARTICLE SIZE; PLASMA; PRIORITY JOURNAL; RADIOFREQUENCY; SCANNING ELECTRON MICROSCOPY;

EID: 0346500499     PISSN: 02786826     EISSN: None     Source Type: Journal    
DOI: 10.1080/02786820490250845     Document Type: Article

References (23)

1. Barnes, M. S., Keller, J. H., Forster, J. C., O'Neill, J. A., and Coultas, D. K. (1992). Transport of Dust Particles in Glow-Discharge Plasmas, Phys. Rev. Lett. 68:313-316.
2. Bouchoule, A., Plain, A., Boufendi, L., Blondeau, J. Ph., and Laure, C. (1991). Particle Generation and Behavior in a Silane-Argon Low-Pressure Discharge Under Continuous or Pulsed Radio-Frequency Excitation, J. Appl. Phys. 70:1991-2000.
3. Carlile, R. N., Geha, S., O'Hanlon, J. F., and Stewart, J. C. (1991). Electrostatic Trapping of Contamination Particles in a Process Plasma Environment, Appl. Phys. Lett. 59:1167-1169.
4. DeCrosta, D. A., and Hackenberg, J. J. (1996). Charge Issues in High Oxygen Gas Ratio Tetraethylorthosilicate Plasma Enhanced Chemical Vapor Deposition Films, J. Vac. Sci. Technol. A 14:709-713.
5. Dorier, J.-L., Hollenstein, Ch., and Howling, A. A. (1992). Powder Dynamics in Very High Frequency Silane Plasmas, J. Vac. Sci. Technol. A 10:1048-1052.
6. Edelberg, E. A., and Aydil, E. S. (1999). Modeling of the Sheath and the Energy Distribution of Ions Bombarding rf-Biased Substrates in High Density Plasma Reactors and Comparison to Experimental Measurements, J. Appl. Phys. 86:4799-4812.
7. Fujimoto, T., Okuyama, K., Shimada, M., and Fujishige, Y. (2000). Particle Generation and Thin Film Surface Morphology in the Tetraethylorthosilicate/ Oxygen Plasma Enhanced Chemical Vapor Deposition Process, J. Appl. Phys. 88:3047-3052.
8. Haaland, P., Ibrani, S., and Jiang, H. (1994). Fluid Dynamics and Dust Growth in Plasma Enhanced Chemical Vapor Deposition, Appl. Phys. Lett. 64:1629-1631.
9. Hinds, W. C. (1999). Aerosol Technology: Properties, Behavior, and Measurement of Airborne Particles, 2nd ed., Wiley-Interscience, New York.
10. 4 RF Discharges, Jpn. J. Appl. Phys. 37:5757-5762.
11. Kim, K. S., and Ikegawa, M. (1996). Particle Growth and Transport in Silane Plasma Chemical Vapor Deposition, Plasma Sources Sci. Technol. 5:311-322.
12. Kondo, K., Imajo, Y., Shimada, M., and Okuyama, K. (2003), Measurement of Trapping Behavior of Dust Particles During Plasma Process by Suck-Out Method (In Japanese), Kagaku Kogaku Ronbunshu, in press.
13. Kortshagen, U., and Bhandarkar, U. (1999). Modeling of Particulate Coagulation in Low Pressure Plasmas, Phys. Rev. E 60:887-898.
14. Matsuoka, Y., Shiratani, M., Fukuzawa, T., Watanabe, Y., and Kim, K. S. (1999). Effects of Gas Flow on Particle Growth in Silane rf Discharges, Jpn. J. Appl. Phys. 38:4556-4560.
15. 2 Films During Ex-Situ Thermal Cycling, J. Electrochem. Soc. 140:2669-2672.
16. Rao, N. P., Wu, Z., Nijhawan, S., Ziemann, P., Campbell, S., Kittelson, D. B., and McMurry, P. (1998). Investigation of Particle Formation During the Plasma Enhanced Vapor Deposition of Amorphous Silicon. Oxide and Nitride Films, J. Vac. Sci. Technol. B 16:483-489.
17. Selwyn, G. S., Heidenreich, J. E., and Haller, K. L. (1991). Rastered Laser Light Scattering Studies During Plasma Processing: Particle Contamination Trapping Phenomena, J. Vac. Sci. Technol. A 9:2817-2824.
18. Setyawan, H., Shimada, M., Ohtsuka, K., and Okuyama, K. (2002a). Visualization and Numerical Simulation of Fine Particle Transport in a Low-Pressure Parallel Plate Chemical Vapor Deposition Reactor, Chem. Eng. Sci. 57:497-506.
19. Setyawan, H., Shimada, M., and Okuyama, K. (2002b). Characterization of Fine Particle Trapping in a Plasma-Enhanced Chemical Vapor Deposition Reactor, J. Appl. Phys. 92:5525-5531.
20. Setyawan, H., Shimada, M., Imajo, Y., Hayashi, Y., and Okuyama, K. (2003). Characterization of Particle Contamination in Individual Process Steps During Plasma-Enhanced Chemical Vapor Deposition Operation, J. Aerosol Sci. 34:923-936.
21. Shiratani, M., Maeda, S., Koga, K., and Watanabe, Y. (2000). Effects of Gas Temperature Gradient, Pulse Discharge Modulation, and Hydrogen Dilution on Particle Growth in Silane rf Discharges, Jpn. J. Appl. Phys. 39:287-293.
22. Tochitani, G., Shimozuma, M., and Tagashira, H. (1993). Deposition of Silicon Oxide Films from TEOS by Low Frequency Plasma Chemical Vapor Deposition, J. Vac. Sci. Technol. A 11:400-405.
23. 2 Deposition by Plasma Enhanced CVD, Appl. Surface Sci. 113:670-674.