Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

Journal of the Electrochemical Society

Volumn 150, Issue 12, 2003, Pages

  Karoui, A ^a   Karoui, F Sahtout ^a   Rozgonyi, G A ^a   Hourai, M ^b   Sueoka, K ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; GROUND STATE; NITROGEN; SILICON; THERMODYNAMIC STABILITY;

FORMATION ENERGY; HARTREE-FOCK CALCULATIONS; NITROGEN DOPED SILICON;

ELECTROCHEMISTRY;

EID: 0345759673     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1621418     Document Type: Article

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