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Volumn 144, Issue 9, 1997, Pages 3180-3184
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Dependence on morphology of oxygen precipitates upon oxygen supersaturation in Czochralski silicon crystals
a
a
Nissei Bldg
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL GROWTH FROM MELT;
MORPHOLOGY;
OXYGEN;
PRECIPITATION (CHEMICAL);
SUPERSATURATION;
THERMAL EFFECTS;
TRANSMISSION ELECTRON MICROSCOPY;
ANNEALING TEMPERATURE;
OXYGEN PRECIPITATES;
SILICON WAFERS;
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EID: 0031232567
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1837979 Document Type: Article |
Times cited : (38)
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References (15)
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