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Volumn 41, Issue 5, 1999, Pages 746-750

EPR of defects in semiconductors: Past, present, future

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033239344     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130862     Document Type: Article
Times cited : (43)

References (23)
  • 4
    • 36149023839 scopus 로고
    • W. Kohn and J. M. Luttinger, Phys. Rev. 97, 1721 (1955); ibid. 98, 915 (1955).
    • (1955) Phys. Rev. , vol.98 , pp. 915
  • 7
    • 77956934208 scopus 로고
    • edited by F. Seitz and D. Turnbull Academic Press, N.Y.
    • G. W. Ludwig and H. H. Woodbury, in Solid State Physics, Vol. 13, edited by F. Seitz and D. Turnbull (Academic Press, N.Y., 1962), p. 223.
    • (1962) Solid State Physics , vol.13 , pp. 223
    • Ludwig, G.W.1    Woodbury, H.H.2
  • 11
    • 0009089398 scopus 로고
    • edited by S. Pantelides Gordon and Breach, N.Y., Ch. 3. This provides a detailed description of the properties of the vacancy in silicon
    • G. D. Watkins, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, N.Y., 1986), Ch. 3. (This provides a detailed description of the properties of the vacancy in silicon.)
    • (1986) Deep Centers in Semiconductors
    • Watkins, G.D.1
  • 12
    • 0000608072 scopus 로고
    • Electronic structure and properties of semiconductors
    • edited by W. Schröter, VCH, Weinheim, Ch. 4
    • G. D. Watkins, in Electronic Structure and Properties of Semiconductors, edited by W. Schröter, Materials Science and Technology (VCH, Weinheim, 1991), Vol. 4, Ch. 4. (This includes a review of vacancies and interstitials in all semiconductors.)
    • (1991) Materials Science and Technology , vol.4
    • Watkins, G.D.1
  • 13
    • 0031379688 scopus 로고    scopus 로고
    • Defects and diffusion in silicon processing
    • edited by T. D. de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Pittsburgh
    • G. D. Watkins, in Defects and Diffusion in Silicon Processing, edited by T. D. de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, MRS Symp. Proc. Vol. 469 (Pittsburgh, 1997), p. 139. (This is a concise review of vacancies and interstitials in silicon.)
    • (1997) MRS Symp. Proc. , vol.469 , pp. 139
    • Watkins, G.D.1
  • 17
    • 0021865689 scopus 로고
    • edited by L. C. Kimeling and J. M. Parsey, Jr. Metallurgical Soc. of AIME, Warrendale
    • Y. Bar-Yam and J. D. Joannopoulos, in 13th Conference on Defects in Semiconductors, edited by L. C. Kimeling and J. M. Parsey, Jr. (Metallurgical Soc. of AIME, Warrendale, 1985), p. 261.
    • (1985) 13th Conference on Defects in Semiconductors , pp. 261
    • Bar-Yam, Y.1    Joannopoulos, J.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.