Modifying single-crystalline silicon by femtosecond laser pulses: An analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy

Applied Surface Science

Volumn 221, Issue 1-4, 2004, Pages 215-230

  Bonse, J ^a   Brzezinka, K W ^b   Meixner, A J ^c  

^a INSTITUTO DE ÓPTICA   (Spain)

^b BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

^c UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Atomic force microscopy; Femtosecond laser ablation; Laser scanning microscopy; Raman spectroscopy; Silicon

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; LASER ABLATION; LASER BEAM EFFECTS; LASER PULSES; OPTOELECTRONIC DEVICES; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING; SINGLE CRYSTALS; THIN FILMS;

POLYCRYSTALLINE RECRYSTALLIZATION; SCANNING LASER MICROSCOPY;

SILICON;

EID: 0344740951     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00881-X     Document Type: Article

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