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Volumn 202, Issue 3-4, 2002, Pages 272-282

Femtosecond laser irradiation of indium phosphide in air: Raman spectroscopic and atomic force microscopic investigations

Author keywords

Atomic force microscopy; Femtosecond laser ablation; Indium phosphide; Raman spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; INDIUM COMPOUNDS; LASER ABLATION; LASER PULSES; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SOLIDIFICATION;

EID: 0037203070     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00948-0     Document Type: Article
Times cited : (65)

References (42)
  • 29
    • 0002113574 scopus 로고
    • Characterization of semiconductors by Raman spectroscopy
    • J.G. Grasselli, B.J. Bulkin (Eds.), Wiley, New York
    • F.H. Pollak, Characterization of semiconductors by Raman spectroscopy, in: J.G. Grasselli, B.J. Bulkin (Eds.), Analytical Raman Spectroscopy, Wiley, New York, 1991.
    • (1991) Analytical Raman Spectroscopy
    • Pollak, F.H.1
  • 33
    • 0034801234 scopus 로고    scopus 로고
    • Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP
    • CLEO/QELS 2001, CLEO Technical Digest CThL7, Baltimore, USA
    • A. Borowiec, M. MacKenzie, G.C. Weatherly, H.K. Haugen, Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP, Poster presented at Conference on Lasers and Electro-Optics, CLEO/QELS 2001, CLEO Technical Digest CThL7, Baltimore, USA, 2001, p. 440.
    • (2001) Conference on Lasers and Electro-Optics , pp. 440
    • Borowiec, A.1    MacKenzie, M.2    Weatherly, G.C.3    Haugen, H.K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.