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Volumn 197-198, Issue , 2002, Pages 839-844

Laser ablation thresholds of silicon for different pulse durations: Theory and experiment

Author keywords

Laser ablation; Pulse duration; Threshold of silicon

Indexed keywords

COMPUTER SIMULATION; LASER PULSES; MELTING; MICROSCOPIC EXAMINATION; MOLECULAR DYNAMICS; SILICON; ULTRAFAST PHENOMENA;

EID: 0036423947     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00458-0     Document Type: Conference Paper
Times cited : (149)

References (23)
  • 1
    • 0003354919 scopus 로고    scopus 로고
    • Proceedings of the Fifth International Conference on the Laser Ablation, Goettingen, 1999
    • J.S. Horwitz, H.-U. Krebs, K. Murakami, M. Stuke (Eds.), Proceedings of the Fifth International Conference on the Laser Ablation, Goettingen, 1999, Appl. Phys. A Mater. Sci. Process. 69 (1999) S1-S952.
    • (1999) Appl. Phys. A Mater. Sci. Process. , vol.69
    • Horwitz, J.S.1    Krebs, H.-U.2    Murakami, K.3    Stuke, M.4
  • 23
    • 0011284805 scopus 로고    scopus 로고
    • Work in this direction is in progress.
    • Work in this direction is in progress.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.