Bleaching of the interstitial iron donor in silicon by transition metal impurities

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 129-132

  Ali, Akbar ^a   Zafar Iqbal, M ^a   Baber, N ^a   Gill, Asghar A ^a  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BLEACHING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; EVAPORATION; IMPURITIES; IRON; QUENCHING; TEMPERATURE; THERMAL DIFFUSION;

HIGH TEMPERATURE DIFFUSION; INTERSTITIAL IRON DONOR; MINORITY CARRIER INJECTION; THERMAL QUENCHING TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 0029755849     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/002     Document Type: Article

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