Electronic properties of grown-in defects in semi-insulating GaAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 209-213

  Kozlowski, R ^a   Pawlowski, M ^a   Kaminski, P ^a   Cwirko, J ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; POINT DEFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

DIGITAL MEASURING TECHNIQUE; HIGH RESOLUTION PHOTOINDUCED TRANSIENT SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032635466     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)