The electronic configuration of substitutional Fe in silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 363-366

  Weyer, G ^a   Burchard, A ^b   Fanciulli, M ^a   Fedoseyev, V N ^c   Gunnlaugsson, H P ^a   Mishin, V I ^c   Sielemann, R ^d  

^a AARHUS UNIVERSITY   (Denmark)

^b CERN   (Switzerland)

^c INSTITUTE OF SPECTROSCOPY   (Russian Federation)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

Mn and Fe in silicon; M ssbauer spectroscopy

Indexed keywords

ELECTRONIC STRUCTURE; IRON; MANGANESE; MOSSBAUER SPECTROSCOPY;

DEBYE TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 0033341183     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00478-0     Document Type: Article

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