Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth

Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 30-37

  Coltrin, Michael E ^a   Mitchell, Christine C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Transport; A2. Epitaxial lateral overgrowth; A2. Selective area growth; B1. Gallium nitride

Indexed keywords

DIELECTRIC MATERIALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY;

CRYSTAL FACETS; SCALING RELATIONSHIPS; SELECTIVE AREA GROWTH (SAG);

GALLIUM NITRIDE;

EID: 0344308271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.016     Document Type: Article

References (25)

1. Bhat R. J. Crystal Growth. 120:1992;362.
2. Akasaka T., Kobayashi Y., Ando S., Kobayashi N. Appl. Phys. Lett. 71:1997;2196.
3. Fini P., Marchand H., Ibbetson J.P., Denbaars S.P., Mishra U.K., Speck J.S. J. Crystal Growth. 209:1999;581.
4. Fini P., Zhao L., Moran B., Hansen M., Marchand H., Ibbetson J.P., Denbaars S.P., Mishra U.K., Speck J.S. Appl. Phys. Lett. 75:1999;1706.
5. Kapolnek D., Keller S., Vetury R., Underwood R.D., Kozodoy P., DenBaars S.P., Mishra U.K. Appl. Phys. Lett. 71:1997;1204.
6. Kitamura S., Hiramatsu K., Sawaki N. Jpn. J. Appl. Phys. 34:1995;L1184.
7. Li X., Jones A.M., Roh S.D., Turnbull D.A., Bishop S.G., Coleman J.J. J. Electron. Mater. 26:1997;306.
8. Nam O.-H., Zheleva T.S., Bremser M.D., Davis R.F. J. Electron. Mater. 27:1998;233.
9. Park J., Grudowski A., Eiting C.J., Dupuis R.D. Appl. Phys. Lett. 73:1998;333.
10. Zheleva T.S., Nam O.-H., Bremser M.D., Davis R.F. Appl. Phys. Lett. 71:1997;2472.
11. Chichibu S.F., Marchand H., Minsky M.S., Keller S., Fini P.T., Ibbetson J.P., Fleischer S.B., Speck J.S., Bowers J.E., Hu E., Mishra U.K., Denbaars S.P., Deguchi T., Sota T., Nakamura S. Appl. Phys. Lett. 74:1999;1460.
12. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Jpn. J. Appl. Phys. 37:1998;L309.
13. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyuku H., Sugimoto Y., Umemoto T., Sano M., Chocho K. Appl. Phys. Lett. 72:1998;211.
14. Follstaedt D.M., Provencio P.P., Missert N.A., Mitchell C.C., Koleske D.D., Allerman A.A., Ashby C.I.H. Appl. Phys. Lett. 81:2002;2758.
15. Hiramatsu K., Nishiyama K., Onishi M., Mizutani H., Narukawa M., Motogaito A., Miyake H., Iyechika Y., Maeda T. J. Crystal Growth. 221:2000;316.
16. Miyake H., Takeuchi R., Hiramatsu K., Naoi H., Iyechika Y., Maeda T., Riemann R., Bertram F., Christen J. Phys. Stat. Sol. A. 194:2002;545.
17. Follstaedt D.M., Provencio P.P., Missert N.A., Mitchell C.C., Koleske D.D., Allerman A.A., Ashby C.I.H. Appl. Phys. Lett. 81:2002;2758.
18. P.P. Provencio, D.M. Follstaedt, N.A. Missert, D.D. Koleske, C.C. Mitchell, A.A. Allerman, C.I.H. Ashby, 743 (2003) 115.
19. Gibbon M., Stagg J.P., Cureton C.G., Thrush E.J., Jones C.J., Mallard R.E., Pritchard R.E., Collis N., Chew A. Semicond. Sci. Technol. 8:1993;998.
20. Caneau C., Bhat R., Chang C.C., Kash K., Koza M.A. J. Crystal Growth. 132:1993;364.
21. Caneau C., Bhat R., Frei M.R., Chang C.C., Deri R.J., Koza M.A. J. Crystal Growth. 124:1992;243.
22. Coltrin M.E., Mitchell C.C. J. Crystal Growth. 254:2003;35.
23. Mitchell C.C., Coltrin M.E., Han J. J. Crystal Growth. 222:2001;144.
24. Breiland W.G., Killeen K.P. J. Appl. Phys. 78:1995;6726.
25. Taylor J.E., Cahn J.W., Handwerker C.A. Acta Metall. Mater. 40:1992;1443.