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Volumn 37, Issue 11, 2003, Pages 1356-1362

1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures

(11) Lyutetskii A V a Pikhtin, N A a Slipchenko, S O a Sokolova, Z N a Fetisova, N V a Leshko, A Yu a Shamakhov, V V a Andreev, A Yu b Golikova, E G b Ryaboshtan Yu A , b Tarasov, I S a

a IOFFE INSTITUTE (Russian Federation)

b Sigm Plus Co (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344287218 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/1.1626224 Document Type: Article

Times cited : (4)

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