Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy

IEEE Journal of Quantum Electronics

Volumn 34, Issue 10, 1998, Pages 1959-1962

  Wang, Jyh Shyang ^b,c   Lin, Hao Hsiung ^a,b   Sung, Li Wei ^b  

^a IEEE

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

Epitaxial growth; Quantum well lasers; Semiconductor lasers

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY CRYSTALLOGRAPHY;

GAS-SOURCE MOLECULAR BEAM EPITAXY; STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0032187582     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.720233     Document Type: Article

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