2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power

IEEE Photonics Technology Letters

Volumn 11, Issue 1, 1999, Pages 33-35

  Mitsuhara, Manabu ^a   Ogasawara, Matsuyuki ^a   Oishi, Mamoru ^a   Sugiura, Hideo ^a   Kasaya, Kazuo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Distributed feedback (DFB) lasers, quantum well; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CURRENTS; LASER MODES; LASER TUNING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

FABRY-PEROT (FP) LASERS; SIDE-MODE SUPPRESSION;

QUANTUM WELL LASERS;

EID: 0032760875     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.736381     Document Type: Article

References (5)

1. S. Forouhar, A. Skendzov. A. Larsson, and H. Temkin, "In-GaAs/InGaAsPInP strained-layer quantum well lasers at ∼2 μm," Electron. Lett., vol. 28, pp. 1431-1432, 1992.
2. M. Ochiai, H. Temkin, S. Forouhar, and R. A. Logan, "InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm," IEEE Photon. Technol. Lett., vol. 7, pp. 825-827, 1997.
3. M. Oishi, M. Yamamoto, and K. Kasaya, "2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers," IEEE Photon Technol. Lett., vol. 9, pp. 431-433, 1997.
4. J. Dong, A. Ubukata, and K. Matsumoto, "Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-InGaAsP quantum-well lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 513-515, 1998.
5. R. U. Martinelli, R. J. Menna, G. H. Olsen, and J. S. Vermaak, "1.95-mm strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers," IEEE Photon Technol. Lett., vol. 6, pp. 1415-1417, 1994.