High power single-mode (λ = 1.3-1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures

Semiconductors

Volumn 36, Issue 11, 2002, Pages 1308-1314

  Leshko, A Yu ^a   Lyutetskii, A V ^a   Pikhtin, N A ^a   Slipchenko, S O ^a   Sokolova, Z N ^a   Fetisova, N V ^a   Golikova, E G ^b   Ryaboshtan, Yu A ^b   Tarasov, I S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Sigm Plus Co   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036856575     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1521236     Document Type: Article

References (21)

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