Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers

Semiconductors

Volumn 35, Issue 3, 2001, Pages 365-369

  Livshits, D A ^a   Egorov, A Yu ^a   Kochnev, I V ^a   Kapitonov, V A ^a   Lantratov, V M ^a   Ledentsov, N N ^a   Nalyot, T A ^a   Tarasov, I S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035285574     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1356164     Document Type: Article

References (10)

1. D. Z. Garbuzov, N. Y. Antonishkis, A. D. Bondarev, et al., IEEE J. Quantum Electron. 27, 1531 (1991).
2. D. Z. Garbuzov, N. Ju. Antonishkis, S. N. Zhigulin, et al., Appl. Phys. Lett. 62, 1062 (1993).
3. D. Botez, Appl. Phys. Lett. 74, 3102 (1999).
4. D. Botez, Compd. Semicond. 5 (6), 24 (1999).
5. A. Al-Muhanna, L. Mawst, D. Botez, et al., Appl. Phys. Lett. 73, 1182 (1998).
6. J. Wang, B. Smith, X. Xie, et al., Appl. Phys. Lett. 74 (11), 1525 (1999).
7. D. Garbuzov, M. Maiorov, V. Khalfin, et al., in Proceedings of the SPIE Photonics West Conference '99, San Jose, 1999, Paper 3625-93.
8. X. He, S. Srinivasan, S. Wilson, et al., Electron. Lett. 34 (22), 2126 (1998).
9. D. A. Livshits, E. Yu. Kotelnikov, A. A. Katsnelson, et al., in Proceedings of the 8th International Symposium "Nanostructures: Physics and Technology," St. Petersburg, 2000, p. 31.
10. J. K. Lee, K. H. Pack, D. H. Jang, et al., IEEE Photonics Technol. Lett. 10 (9), 1226 (1998).