Reliable high power GaInAsP/InP (1.9μm) laser diodes

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1343-1344

  He, X ^a   Xu, D ^a   Ovtchinnikov, A ^a   Wilson, S ^a   Malarayap, F ^a   Supe, R ^a   Patel, R ^a  

^a Opto Power Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENTS; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RESOLVING POWER; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

CAVITY LENGTH; CONTINUOUS WAVE OPTICAL POWER; DIFFERENTIAL QUANTUM EFFICIENCY; MONOLITHIC DIODE ARRAY LASING; POWER CONVERSION EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 0032663476     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990898     Document Type: Article

References (4)

1. 12', Opt. Lett., 1996, 21, (10), pp. 728-730
2. HE, X., XU, D., OVTCHINNIKOV, A., MALARAYAP, F., SUPE, R., WILSON, S., and PATEL, R.: 'High power efficient GaInAsP/InP (1.9μm) laser diode arrays', Electron. Lett., 1999, 35, (5), pp. 397-398
3. MAJOR, J.S., OSINSKI, J.S., and WELCH, D.F.: '8.5W CW 2.0μn InGaAsP laser diodes', Electron. Lett., 1993, 29, (24), pp. 2112-2113
4. GARBUZOV, D.Z.: 'High-power 800-2000nm wavelength broad waveguide SCH-QW diode lasers'. Conf. Lasers and Electro-Optics, 1998, pp. 10-11