Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Surface Science

Volumn 376, Issue 1-3, 1997, Pages 60-68

  Taskinen, M ^a   Sopanen, M ^a   Lipsanen, H ^a   Tulkki, J ^a   Tuomi, T ^a   Ahopelto, J ^b  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Atomic force microscopy; Chemical vapor deposition; Indium arsenide; Indium phosphide; Luminescence; Self assembly; Surface structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

INDIUM ARSENIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031120336     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01597-X     Document Type: Article

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