Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

IEEE Electron Device Letters

Volumn 18, Issue 12, 1997, Pages 580-582

  Gupta, Ashawant ^a,b   Fang, Peng ^a   Song, Miryeong ^a,c   Lin, Ming Ren ^a   Wollesen, Don ^a   Chen, Kai ^d   Hu, Chenming ^d  

^a ADVANCED MICRO DEVICES   (United States)

^b Micro Instruments Co   (India)

^c Hannam University   (South Korea)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRON TUNNELING; PERMITTIVITY; SEMICONDUCTOR DOPING; TRANSISTORS;

CMOS DEVICES; POLYSILICON DOPING; ULTRATHIN GATE OXIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0031333325     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.644077     Document Type: Article

References (9)

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