Quantum dot and quantum wire infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4986, Issue , 2003, Pages 190-205

  Ryzhii, Victor ^a   Khmyrova, Irina ^a  

^a UNIVERSITY OF AIZU   (Japan)

Author keywords

Computer modeling; Current gain; Dark current; Detectivity; Photocurrent; Quantum dot infrared photodetector; Quantum wire infrared photodetector; Responsivity

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; MONTE CARLO METHODS; PHOTOCURRENTS; POISSON EQUATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

CURRENT GAIN; DARK CURRENTS;

INFRARED DETECTORS;

EID: 0242609064     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483605     Document Type: Conference Paper

References (57)

1. M. Razeghi, Ed. Long Wavelength Infrared Detectors, Gordon and Breach, Amsterdam, 1996
2. K. K. Choi, The Physics of Quantum Well Infrared Photodetectors, World Scientific, Singapore, 1997
3. H. C. Liu and F. Capasso, Eds., Intersubband Transitions in Quantum Wells: Physics and Device Applications I, Academic Press, San Diego, 2000.
4. V. Ryzhii, Ed. Intersubband Infrared Photodetectors, World Scientific, Singapore, 2002.
5. V. Ryzhii, "The theory of quantum dot infrared phototransistors," Semicond. Sci. Technol., 11, pp. 759-765, 1996.
6. V. Ryzhii, M. Ershov, I. Khmyrova, M. Ryzhii, and T. Iizuka, "Multiple quantum-dot infrared phototransistors," Physica B, 227, pp. 17-20, 1996.
7. V. Ryzhii, I. Khmyrova, M. Ryzhii, and M. Ershov, "Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire base," J. Physique IV, 6, pp. C3-157-C3161, 1996
8. V. Ryzhii, M. Ershov, I. Khmyrova, M. Ryzhii, and T. Iizuka, "Intersubband infrared phototransistors with a quantum-wire base," Proc. Int. Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, Eds. V. Ryzhii, C. Hamaguchi, V. Mitin, M. Ershov, IEEE Computer Society Press, Los Alamitos, pp. 21-26, 1995.
9. K. W. Berryman, S. A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots," Appl. Phys. Lett., 70, pp. 1861-1863, 1997.
10. J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots," Appl. Phys. Lett., 72, pp. 2020-2022, 1998.
11. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector," Appl. Phys. Lett., vol. 73, pp. 963-965, 1998.
12. D. Pan, E. Towe, and S. Kennerly, "Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., 73, pp. 1937-1939, 1998.
13. S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, and P. M. Petroff, "Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors," Appl. Phys. Lett., 73, pp. 2003-2005, 1998.
14. S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, "Characteristics of InGaAs quantum dot infrared photodetectors," Appl. Phys. Lett., 73, pp. 3153-3155, 1998.
15. N. Horiguchi, T. Futatsugi, Y. Nakata, N. Yokoyama, T. Mankad, and P. M. Petroff, "Quantum dot infrared photodetector using modulation doped InAs self-assembled quantum dots," Jpn. J. Appl. Phys., 38, pp. 2559-2561, 1999.
16. J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta, "Self-assembled InAs-GaAs quantum-dot intersubband detectors," IEEE J. Quantum Electron., 35, pp. 936-943, 1999.
17. D. Pan, E. Towe, and S. Kennerly, "A five-period normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetector," Appl. Phys. Lett., 75, pp. 2719-2721, 1999.
18. Z. Ye, J. C. Campbell, Z. Chen, E.-T. Kim, and A. Madhukar, "Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity," IEEE J. Quantum Electron., 38, pp. 1234-1237, 2002.
19. 0.7As blocking barriers," IEEE Trans. Electron Devices, 49, pp. 1341-1347, 2002.
20. A. I. Yakimov, A. V. Dvurechenskii, Yu. Yu. Proskuryakov, A. I. Nikiforov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovskii, "Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots," Appl. Phys. Lett., 75, pp. 1413-1415, 1999.
21. N. Rappaport, E. Finkman, T. Brunhes, P. Boucaud, S. Sauvage, N. Yam, V. Le Thanh, and D. Boucier, "Midinfrared photoconductivity of Ge/Si self-assembled quantum dots," Appl. Phys. Lett., 77, pp. 3224-3226, 2000.
22. H. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, "Quantum dot infrared photodetectors," J. Appl. Phys, 78, pp. 79-81, 2001.
23. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, Yu. Yu. Proskuryakov, "Interlevel Ge/Si quantum dot infrared photodetector, J. Appl. Phys, 89, pp. 5676-5681, 2001.
24. P. Boucaud, T. Brunhes, S. Sauvage, N. Yam, V. Le Thanh, D. Boucier, and N. Rappaport, "Midinfrared photoconductivity in Ge/Si self-assembled quantum dots," Physica Stat. Sol. (a) 224, pp. 233-236, 2001.
25. C. Miesner, K. Brunner, and G. Abstreiter, "Vertical and layeral mid-infrared photocurrent study on Ge quantum dots in Si," Physica Stat. Sol. (a) 224, pp. 605-608, 2001.
26. S.-W. Lee, K. Hirakawa, and Y. Shimada, "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures," Appl. Phys. Lett., 75, pp. 1428-1430, 1999.
27. L. P. Rokhinson, C. J. Chen, D. C. Tsui, G. A. Vawter, and K. K. Choi, "Quantum grid infrared photodetectors," Appl. Phys. Lett., 74, pp. 759-761, 1999.
28. 0.85As dots-in-a-well detector," Appl Phys. Lett., 81, pp. 1369-1371, 2002.
29. E. Towe and D. Pan, "Semicoductor quantum-dot nanostructures: Their application in a new class of infrared photodectectors." IEEE J. of Selected Topics in Quant. Electron., 6, pp. 408-421, 2000.
30. V. Ryzhii, I. Khmyrova, M. Ryzhii, V. Pipa, V. Mitin, and M. Willander, "Why QDIPs are still inferior to QWIPs: Theoretical analysis," Proc. SPIE, 4288, pp. 396-403, 2001.
31. P. Bhattacharya, A. D. Stiff-Roberts, S. Krishna, S. Kennerly, "Quantum dot infrared photodetectors," Proc. SPIE, 4646, pp. 100-109, 2002,
32. M. Helm, W. Hilber, T. Fromherz, F. M. Peters, K. Alavi, and R. N. Psthar, "Intersubband absorption in strongly coupled superlattices: miniband dispersion, critical points, and oscillator strengths," in Quantum Well Intersubband Transition Physics and Devices, ed. H. C. Liu, B. F. Levine, and J. Y. Andersson, Dordrecht, Netherlands, Kluwer, 1994, pp. 291-300.
33. H. C. Liu, "Photoconductive gain mechanism of quantum-well intersubband infrared photodetectors," Appl. Phys. Lett., 60, pp. 1507-1509, 1992.
34. V. Ryzhii, "Characteristics of quantum well infrared photodetectors," J. Appl. Phys., 81, pp. 6442-6448, 1997.
35. V. Ryzhii and H. C. Liu, "Contact and space-charge effects in quantum well infrared photodetectors," Jpn. J. Appl. Phys., 38, pp. 5815-5822, 1999.
36. V. Ryzhii, M. Ryzhii, and H. C. Liu, "Self-consistent model for quantum well infrared photodetectors with thermionic injection under dark conditions," J. Appl. Phys., 92, pp. 207-213, 2002.
37. E. Rosencher, B. Vinter, F. Luc, L. Thibaudeau, P. Bois, and J. Nagle, "Emission and capture of electrons in multi-well structures," IEEE Trans. Quantum Electron. 30, pp. 2875-2888, 1994.
38. M. Ryzhii and V. Ryzhii, "Monte Carlo modeling of electron transport and capture processes in AlGaAs/GaAs quantum well infrared photodetectors," Jpn. J. Appl. Phys., 38, pp. 5922-5927, 1999.
39. M. Ryzhii, V. Ryzhii, and M. Willander "Effect of donor space charge on electron capture processes in quantum well infrared photodetectors," Jpn. J. Appl. Phys., 38, pp. 6650-6653, 1999.
40. V. Ryzhii, V. Pipa, I. Khmyrova, V. Mitin, and M. Willander, "Dark current in quantum dot infrared photodetectors" Jpn. J. Appl. Phys., 39, pp. L1283-L1285, 2000.
41. V. Ryzhii, I. Khmyrova, V. Pipa, V. Mitin, and M. Willander, "Device model for quantum dot infrared photodetectors and their dark current characteristics" Semicond. Sci. Technol, 16, pp. 331-338, 2001.
42. V. Ryzhii, "Analysis of photocurrent in quantum dot infrared photodetectors" Jpn. J. Appl. Phys., 40, pp. L148-L150, 2001.
43. V. Ryzhii, I. Khmyrova, V. Mitin, M. Stroscio, and M. Willander, "On the detectivity of quantum dot infrared photodetectors" Appl. Phys. Lett., 78, pp. 3523-3525, 2001.
44. V. Ryzhii, "Negative differential photoconductivity in quantum dot infrared photodetectors" Appl. Phys. Lett., 78, pp. 3346-3348, 2001.
45. A. Sergeev, V. Mitin, and M. Stroscio, "Quantum-dot photodetector operating at room temperatures: diffusion-limited capture," Physica B, 316-317, pp. 369-371, 2002.
46. M. Ershov, V. Ryzhii, C. Hamaguchi, "Contact and distributed effects in quantum well infrared photodetectors," Appl. Phys. Lett., 67, pp. 3147-3149, 1995.
47. A. Sa'ar, C. Mermelstein, H. Schneider, C. Schoenbein, and M. Walther, "Space-charge buildup in quantum well infrared photodetectors leading to low-power nonlinear photoresponse," IEEE Photon. Technol. Lett., 10, pp. 1470-1472, 1998.
48. S. Luryi, "An induced base hot electron transistor," IEEE Electron Device Lett., 6, pp. 178-180, 1985.
49. V. Ryzhii and M. Ershov, "Electron density modulation effect in a quantum-well infrared phototransistor," J. Appl. Phys., 78, pp. 1214-1218, 1995.
50. J.-Y. Duboz, H. C. Liu, Z. R. Wasilewski, M. Byloss, and R. Dudek, "Tunnel current in quantum dot infrared photodetectors," J. Appl. Phys., 93, pp. 1320-1322, 2003.
51. I. Grave and A. Yariv, "Fundamental limits in quantum well intersubband detection," Intersubband Transitions in Quantum Wells, ed. E. Rosencher, B. Vinter, and B. Levine, Plenum Press, New York, 1992, pp. 15-30.
52. A. Vasanelli, M. De Giorgi, R. Ferreira, R. Cingolani, and G. Bastard, "Energy levels and far-infrared absorption of multi-stacked dots," Physica E, 11, pp. 41-50, 2001.
53. L.-X. Li, S. Sun, and Y.-C. Chang, "Optical properties of self-assembled quantum wires for application in infra-red detection," Infrared Phys. & Technol., 44, pp. 57-67, 2003.
54. M. Ryzhii, V. Ryzhii, R. Suris, and C. Hamaguchi, "Periodic electric-field domains in optically excited multiple-quantum structures," Phys. Rev, 61, pp. 2742-2748, 2000.
55. M. Ryzhii and V. Ryzhii, "Monte Carlo modeling of transient recharging processes in quantum-well infrared photodetectors," IEEE Trans. Electron Devices, 47, pp. 1935-1942, 2000.
56. M. Ryzhii, V. Ryzhii, and V. Mitin, "Electric-field and space-charge distributions in InAs/GaAs and InGaAs/GaAs quantum dot infrared photodetectors: Ensemble Monte Carlo particle modeling," 4th Int. Conf. on Low Dimensional Structures and Devices, Book of Abstracts, p. WeO-2, Fortaleza, 2002.
57. V. Ryzhii. "Superlattice infrared phototransistor". Bulletin of APS, 1996, 41, No. 1, p. 323.