Device model for quantum dot infrared photodetectors and their dark-current characteristics

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 331-338

  Ryzhii, V ^a   Khmyrova, I ^a   Pipa, V ^b   Mitin, V ^b   Willander, M ^c  

^a UNIVERSITY OF AIZU   (Japan)

^b Wayne State University   (United States)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; PHOTODETECTORS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DARK CURRENT; ELECTRON CAPTURE; STRUCTURAL PARAMETER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035326975     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/309     Document Type: Article

References (29)