Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire base

Journal De Physique. IV : JP

Volumn 6, Issue 3, 1996, Pages 157-161

  Ryzhii, V ^a   Khmyrova, I ^a   Ryzhii, M ^a   Ershov, M ^a  

^a UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSITIONS; INFRARED DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

DARK CURRENT; INFRARED PHOTOTRANSISTORS; INTERSUBBAND ELECTRON TRANSITIONS; QUANTUM WIRE BASE;

PHOTOTRANSISTORS;

EID: 0030124280     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1996324     Document Type: Review

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4. Ryzhii V. and Ershov M., J. Appl. Phys. 78 (1995) 1214.
5. Ryzhii V., Khmyrova I., Ershov M. and Iizuka T., Semicond. Sci. Technol. 10 (1995) 997.