Review of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glass oxide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 1969-1985

  Keil, D L ^a   Helmer, B A ^a   Lassig, S ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER; DIELECTRIC PROPERTIES; GLASS; MASKS; PHOTOLITHOGRAPHY; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICATES;

COPPER DUAL DAMASCENE; DIFFUSION BARRIER LAYER; FLUORINATED SILICATE GLASS OXIDE FILM; TRENCH-FIRST TECHNOLOGY;

PLASMA ETCHING;

EID: 0242593780     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1603293     Document Type: Review

References (80)

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