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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 24, 2001, Pages 2453221-2453227

Vacancy-related deep levels in n-type Si1-xGex strained layers

(3) Monakhov, E V a Kuznetsov, A Yu a Svensson, B G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; PHOSPHORUS; SILICON;

ARTICLE; CHEMICAL COMPOSITION; ENTHALPY; IRRADIATION; NONLINEAR SYSTEM; QUANTUM MECHANICS; SPECTROSCOPY;

EID: 0034894727 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (22)

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