SiGe technology makes practical advances

Microwaves and RF

Volumn 38, Issue 10, 1999, Pages 121-126

  Browne, Jack ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242671140     PISSN: 07452993     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (2)

1. Robb Johnson et al., "1.8-million CMOS ASIC Fabricated In A SiGe BiCMOS.Technology," IEDM Technical Digest, 1998, pp. 217-220.
2. Jean-Olivier Plouchart, Herschel Ainspan, and Mehmet Soyuer, "A 5.2-GHz 3.3-V I/Q SiGe RF Transceiver," Custom IC Conference, Session 10.5, 1999.