Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers

Journal of Applied Physics

Volumn 87, Issue 9 I, 2000, Pages 4629-4631

  Monakhov, E V ^a   Kuznetsov, A Yu ^a   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000119842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373115     Document Type: Review

References (14)

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