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Volumn 72, Issue 9, 1998, Pages 1069-1071

Electrical characterization of defects introduced in p-Si1-xGex during electron-beam deposition of Sc Schottky barrier diodes

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; ENERGY GAP; IRRADIATION; METALLIZING; SCHOTTKY BARRIER DIODES;

EID: 0032473270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120967     Document Type: Article
Times cited : (25)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.