|
Volumn 72, Issue 9, 1998, Pages 1069-1071
|
Electrical characterization of defects introduced in p-Si1-xGex during electron-beam deposition of Sc Schottky barrier diodes
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ACTIVATION ENERGY;
COMPOSITION;
CRYSTAL DEFECTS;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRONS;
ENERGY GAP;
IRRADIATION;
METALLIZING;
SCHOTTKY BARRIER DIODES;
BARRIER HEIGHT;
ELECTRON BEAM DEPOSITION;
ELECTRON BEAM EVAPORATION;
ELECTRON IRRADIATION;
SEMICONDUCTING SILICON COMPOUNDS;
|
EID: 0032473270
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.120967 Document Type: Article |
Times cited : (25)
|
References (18)
|