An Empirical HBT Large-Signal Model for CAD

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 13, Issue 6, 2003, Pages 518-533

  Angelov, I ^a   Choumei, K ^b   Inoue, A ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

M icrowave circuits; Nonlinear circuit design; Nonlinear models for active devices

Indexed keywords

CAPACITANCE; COMPUTER AIDED DESIGN; MICROWAVE CIRCUITS; SCATTERING PARAMETERS;

NONLINEAR CIRCUIT DESIGN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0242366262     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/mmce.10110     Document Type: Article

References (34)

1. P.C. Grossman and J. Choma, Jr. Large-signal modelling of HBT including self-heating and transit time effects, IEEE Trans MIT 40 (1992), 449-464.
2. C. Colin, J. Seitchik, D. Bowers, M. Dunn, J. Getreu, M. Swain, S. Moinian, J. Parker, M. Schroter, and L. Wagner, VBIC95: The vertical bipolar inter-company model, IEEE J SSC 31 (1996), 1475-1483.
3. R. Anholt, Electrical and thermal characterization of MESFETs HEMTs, and HBTs, Artech House, Boston, 1995.
4. K. Lu, P. Perry, and T. Brazil, A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter extraction procedure, IEEE Trans MTT 43 (1995), 1433-1445.
5. L. Camnitz, S. Kofol, T. Low, and R. Bahl, An accurate large signal high frequency model for GaAs HBT, GaAs IC Symp, 1996, pp. 303-306.
6. UCSD Model, UCSD Electrical and Computer Engineering Dept., 1995
7. S. Tiwari and D. Frank, Analyses of the operation of GaAlAs/GaAs HBTs, IEEE Trans ED 36 (1989), 2105.
8. C. Wei, C.M. Hwang, W. Ho, and J. Higgins, Large signal modelling of self-heating, collector transit time and RF breakdown effects in power HBTs, IEEE Trans MTT 44 (1996), 2641.
9. Rudolph, R. Doerner, and P. Heymann, New GaInP/GaAs-HBT large-signal model for power applications, EUMC'98, 1998, p. 231.
10. K. Gummel and H.C. Poon, An integral charge control model of bipolar transistors, BSTJ 49 (1970), 827-852.
11. G.M. Kull, L. Nagel, S. Lee, P. Lloyd, J. Prendergast, and H. Dirks, IEEE Trans ED ED 32 (1985), 1103-1113.
12. J. Fossum, Modelling issues for advanced bipolar device/circuit simulations, Bip Trans Mtgs (1989), 234-241.
13. J. Scott, Nonlinear III-V HBT compact models: Do we have what we need? IEEE MTTS Digest, 2001, 663-666.
14. S. Laux, Technique for small-signal analysis of semiconductor devices, IEEE Trans ED 32 (1985), 2028-2037.
15. K. Joardar, A new technique for measuring junction capacitance in bipolar transistors, IEEE Bipolar/BiCMOS Circuits Technol Mtg, 1995, p. 133.
16. H.C. Poon and H.K. Gummel, Modelling of emitter capacitance, Proc IEEE (1969), 2181.
17. R. Anholt, J. Gerber, R. Tayrany, and J. Pence, HBT model extractor for spice and harmonic balance simulations IEEE MTT-S (1994), 1257.
18. S. Maas and D. Tait, Parameter-extraction method for heterojunction bipolar transistors, IEEE Microwave Guided Wave Lett 2 (1992), 502-504.
19. D. Pehlke and D. Pavlidis, Evaluation of the factors determining HBT high frequency performance by direct analysis of S-parameter Data, IEEE Trans MTT 40 (1992), 2367-2373.
20. D. Dawson and A. Gupta, CW measurement of HBT thermal resistance, IEEE Trans ED 39 (1992), 2235.
21. W.J. Klosterman, J. Paasschens, and D. Klaassen, Improved extraction of base and emitter resistance from small signal high frequency admittance measurements, IEEE BCTM (1999), 93-96.
22. HBT Static Model IC-Cap Users' Meeting, 1996.
23. D. Costa, W. Liu, and J. Harris, Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit, IEEE Trans ED 38 (1991), 2018-2024.
24. P. Baureis and D. Seitzer, Parameter extraction for HBT's temperature-dependent large-signal equivalent circuit model, IEEE GaAs IC Symp, 1993, 263-267.
25. Y. Suh, D. Heo, A. Raghavan, E. Gebara, S. Nuttnick, K. Lim, and J. Laskar, Direct extraction and modelling method for temperature-dependent large-signal CAD model of Si-BJT, MTTS-Dig, 2001, pp. 971-974.
26. M. Schröter and T. Lee, Physics-based minority charge and transit time modelling for bipolar transistors, IEEE Trans ED 46 (1999), 75.
27. D. Teeter and W. Curtice, Comparison of hybrid pi and tee HBT circuit topologies and their relationship to large-signal modelling, MTTS-Dig, 1997, pp. 375-378.
28. M. Rudolph, R. Doerner, K. Bilenhoff, and P. Haymann, Unified model for collector charge in heterojunction bipolar transistors, IEEE Trans MTT 50 (2002), 1747-1751.
29. M. Rudolph, F. Lenk, R. Doerner, and P. Haymann, On the implementation of transit-time effects in compact HBT large-signal models, MTTS-Dig, 2002, pp. 997-1000.
30. T. Shimura, T. Miura, Y. Uneme, H. Nakano, R. Hattory, M. Otsubo, K. Mori, A. Inoue, and N. Tanino, High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones, IEICE Trans Electron E80-C (1997), 740-745.
31. L. Bengtsson, C. Hedenas, and I. Angelov, Verification of an HBT Gummel-Poon model by power spectrum, EUMC 1996, 911.
32. I. Angelov, K. Choumei, and A. Inoue. An empirical HBT large-signal model for CAD, 2002 MTTS-Dig, 2137-2140.
33. Microwave Office, Element catalogue, 2002.
34. M. Linder, F. Ingvarsson, K. Jeppson, and J. Grahn, Extraction of emitter and base series resistances of bipolar transistors from a single dc measurement, IEEE Trans Semiconductor Manufacturing 13 (2000), 119-125.