Large-signal modeling of self-heating, collector transit-time, and rf-breakdown effects in power hbt's

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 12 PART 2, 1996, Pages 2641-2647

  Wei, Ce Jun ^a   Hwang, James C M ^a   Ho, Wu Jing ^a   Aiden Higgins, J ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; GAIN MEASUREMENT; MATHEMATICAL MODELS; THERMAL EFFECTS; THERMAL STRESS;

BIAS CURRENTS; RADIO FREQUENCY BREAKDOWN EFFECTS; SELF HEATING EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030418850     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554615     Document Type: Article

References (23)

1. P. C. Grossman and J. Chôma, Large signal modeling of HBT's including self-heating and transit-time effects, IEEE Trans. Microwave Theory Tech., vol. 40, pp. 449-464, Mar. 1992.
2. P. Baureis, D. Seitzer and U. Schaper, Modeling of self-heating in GaAs/AlOaAs HBT's for accurate circuit and device analysis, Tech. Dig. IEEE GaAs 1C Symp., Oct. 1991, pp. 125-128.
3. C. McAndrew, A complete and consistent electrical/thermal HBT model, IEEE Bipolar Circuits Technol. Meet. Proc., 1992, pp. . 10.1.1-10.1.4.
4. Q. M. Zhang, J. Hu, J. Sitch, R. K. Surridge, and J. M. Xu, A new large-signal HBT model, IEEE MTT-S Int. Microwave Symp.-Dig., May 1994, pp. 1253-1256.
5. V. Krozer, M. Ruppert, W.'Y. Lee, J. Grajal, A. Goldhorn, M. Schussler, K. Fricke, and H. L. Hartnagel, A physics-based temperature-dependent SPICE model for the simulation of high- temperature microwave performance of HBT's and experimental results, IEEE MTT-S Int. Microwave Symp. Dig., May 1994, pp. 1261-1264.
6. K. Lu, P. Perry, and T. J. Brazil, A new SPICE-type heterojunction bipolar transistor model for dc, microwave small-signal and large-signal circuit simulation, IEEE MTT-S Int. Microwave Symp. Dig., May . 1994, pp. 1579-1582. .
7. A. Samelis and D. Pavildis, Heterojunction bipolar transistor largesignal model for high-power microwave application, IEEE MTT-S Int. Microwave Symp. Dig., May 1995, pp. 1231-1234.
8. R. Hajji, A. B. Kouki, S. E. Rabaie, and F. M. Ghannouchi, Systematic dc/small-signal/large-signal analysis of heterojunction bipolar transistors using a new consistent nonlinear model, IEEE Trans. Microwave Theory Tech. vol. 44, pp. 233-240, Feb. 1996.
9. D. A. Teeter, J. R. East, R. K. Mains, and G. I. Haddad, Large-signal numerical and analytical HBT models, IEEE Trans. Microwave Theory Tech., pp. 837-844, May 1993.
10. P. Baureis and D. Seitzer, Parameter extraction for HBT's temperature dependent large-signal equivalent circuit model, Technical Dig. IEEE GaAs 1C Symp., Oct. 1993, pp. 263-266.
11. K. Lu, P. A. Perry and T. J. Brazil, A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure, IEEE Trans. Microwave Theory Tech., vol. 43, pp. 1433-1445, July 1995.
12. N. Wang, N: Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, and P. Asbeck, Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz, IEEE Trans. Microwave Theory Tech., vol. 38, pp. 1381-1389, Oct. 1990.
13. M. G. Adlerstein and M. D, Zatlin, Cutoff operation of heterojunction bipolar transistors, Microwave J., pp. 114-125, Sept. 1991.
14. D. S. Whitefield, C. J. Wei, and J. C. M. Hwang, Temperaturedependent large-signal model of heterojunction bipolar transistors, 'in Tech. Dig. IEEE GaAs 1C Symp., Oct. 1992, pp. 221-224.
15. Elevated temperature microwave characteristics of heterojunction bipolar transistors, Tech. Dig. IEEE GaAs 1C Symp., Oct. 1993, pp. 267-270.
16. B. R. A. Sugeng, C. J. Wei, J. C. M. Hwang, W. P. Hong, J. I. Song, and J. Hayes, A physically based SPICE model for microwave double heterojunction bipolar transistor, Dig. IEEE Sarnoff Symp., Mar. 1993.
17. B. R. A. Sugeng, C. J. Wei, J. C. M. Hwang, J. I. Song, W. P. Hong, and J. R. Hayes, Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors, Proc. IEEE/Cornell Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 1993, pp. 52-61.
18. C. J. Wei, Y. E. Lan, J. C. M. Hwang, W. J. Ho, and J. A. Higgins, Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors, IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2899-2903, Dec. 1995.
19. C. J. Wei, J. C. M. Hwang, W. J. Ho, and J. A. Higgins, Large-signal modeling of self-heating and RF-breakdown effects in power HBT's, Dig. IEEE MTT-S Int. Microwave Symp., June 1996, pp. 1751-1754.
20. H. C. Chung, M. D. Wetzel, and J. C. M. Hwang, Instantaneous burnout, long-term burn-out and gradual degradation of HBT's, Programs Abstract GaAs Reliability Workshop, pp. 11-13, Oct. 1995.
21. C. J. Wei and J. C. M. Hwang, New method for direct extraction of HBT equivalent circuit parameters, IEEE Trans Microwave Theory Tech., vol. 43, pp. 2035-2040,Sept. 1996.
22. HP-EEsof, Westlake Village, CA 91362 USA.
23. J. C. M. Hwang, Gradual degradation under RF overdrive of MESFET's and PHEMT's, Tech. Dig. IEEE GaAs 1C Symp., Oct. 1995, pp. 81-84.