Towards a unified method to implement transit-time effects in Pi-topology HBT compact models

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 997-1000

  Rudolph, M ^a   Lenk, F ^a   Doerner, R ^a   Heymann, P ^a  

^a FBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CAPACITANCE; COMPUTER SIMULATION; DELAY CIRCUITS; ELECTRIC NETWORK TOPOLOGY; EQUIVALENT CIRCUITS; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; TIME DOMAIN ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTOR EQUIVALENT CIRCUIT; PARAMETER EXTRACTION; TRANSIT-TIME EFFECT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036070345     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. Simulation of excess phase in bipolar transistors
2. VBIC95, the vertical bipolar inter-company model
3. Comparison of hybrid pi and tee HBT circuit topologies and their relationship to large signal modeling
4. Small-signal non-quasi-static model for single and double heterojunction bipolar transistors
5. A non-quasi-static model of GaInP/AlGaAs HBT for power applications
6. Time-domain nonlinear HBT model including non-quasi-static effects
7. A new large signal HBT model
8. Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's
9. Scalable GaInP/GaAs HBT large-signal model
10. Linearity characteristics of GaAs HBTs and the influence of collector design
11. Unified model for collector charge in heterojunction bipolar transistors
12. High performance InGaP/GaAs HBTs for mobile communications
13. Direct extraction of HBT equivalent circuit elements