High efficiency AlGaAs GaAs power HBTs at a low supply voltage for digital cellular phones

IEICE Transactions on Electronics

Volumn E80-C, Issue 6, 1997, Pages 740-744

  Shimura, Teruyuki ^a   Miura, Takeshi ^a   Uneme, Yutaka ^a   Nakano, Hirofumi ^a   Hattori, Ryo ^a   Otsubo, Mutsuyuki ^a   Mori, Kazutomi ^a   Inoue, Akira ^a   Tanino, Noriyuki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Bias mode; Digital cellular phone; Emitter air bridge; Heterojunction bipolar transistor; Individual thermal shunt

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; HEAT RESISTANCE; PHASE SHIFT KEYING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

EMITTER AIR BRIDGE; POWER ADDED EFFICIENCY (PAE); THERMAL SHUNT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031170620     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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6. D.E. Dawson, A.K. Gupta, and M.L. Salib, "CW measurement of HBT thermal resistance," IEEE Trans. Electron Devices, vol. 39, no. 10, pp. 2235-2239, Oct.1992.
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