Direct extraction and modeling method for temperature dependent large signal CAD model of Si-BJT

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 971-974

  Suh, Y ^a   Heo, D ^b   Raghavan, A ^b   Gebara, E ^b   Nuttnick, S ^b   Lim, K ^b   Laskar, J ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS;

CURRENT SOURCE MODELING METHOD; DIRECT EXTRACTION METHOD; PARAMETER EXTRACTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035692718     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967054     Document Type: Article

References (9)

1. Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model
2. A RF transceiver for WDCT in a 25GHz Si bipolar technology
3. VBIC95, the vertical bipolar intercompany model
4. Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models
5. Physics and process based bipolar transistor modeling for integrated circuit design
6. Extraction of BJT model parameters using optimization method
7. Compact modeling of BJT self-heating in SPICE
8. A physical yet simple small signal equivalent circuit for the heterojunction bipolar transistor
9. Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-pi model