Unified model for collector charge in heterojunction bipolar transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 7, 2002, Pages 1747-1751

  Rudolph, Matthias ^a,b   Doerner, Ralf ^a,b   Beilenhoff, Klaus ^a,c,d   Heymann, Peter ^a,b  

^a IEEE   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d United Monolithic Semiconductors GmbH   (Germany)

Author keywords

Equivalent circuit; Heterojunction bipolar transistor; Semiconductor device modeling

Indexed keywords

COLLECTOR CHARGES;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036647248     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.800425     Document Type: Article

References (10)

1. Scalable GaInP/GaAs HBT large-signal model
2. Linearity characteristics of GaAs HBT's and the influence of collector design
3. Reduction of the base-collector capacitance in InP/GaInAs heterojunction bipolar transistors due to electron velocity modulation
4. A new large signal HBT model
5. Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's
6. Small-signal nonquasi-static model for single and double heterojunction bipolar transistors
7. A nonquasi-static model of GaInP/AIGaAs HBT for power applications
8. High performance InGaP/GaAs HBT'S for mobile communications
9. Low phase noise GaInP/GaAs HBT MMIC-oscillators up to 36 GHz
10. Direct extraction of HBT equivalent circuit elements